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current mode pwm controller ap384xc data sheet 1 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited general description the ap3842c/3c/4c/5c are high performance fixed frequency current-mode pwm controller series. these integrated circuits ar e optimized for off-line and dc-dc converter applications with minimum external components. they feature under-voltage lockout (uvlo) circuit with low start-up current, trimmed oscillator for precise duty cy cle control, current sense comparator providing maximum current limiting and a totem pole output stage fo r increasing output current. in addition, these ics also feature accurate protection against over-temperature, over-current and maximal output power. the ap3842c and ap3844c have uvlo thresholds of 16v(on) and 10v(off); the corresponding thresh- olds for ap3843c and ap3845c are 8.4 v(on) and 7.6v(off). the ap3842c and ap3843c can operate approaching 100% duty cycle; ap3844c and ap3845c can operate from zero to 50% duty cycle. these ics are available in soic-8 and dip-8 pack- ages. features low start-up current: 50 a robust v ref line/load regulation low line regulation : 4mv low load regulation : 4mv high stability of reference voltage over a full temperature range: 0.2mv/ o c operating frequency up to 500khz high pwm frequency stability over a full tem- perature range: 2.5% high pwm frequency stability under a full sup- ply voltage range: 0.2% accurate over-temperature protection with hys- teresis uvlo with hysteresis applications off-line converter dc-dc converter voltage adapter crt monitor power supply desktop power supply dvd/stb power supply soic-8 dip-8 figure 1. package types of ap3842c/3c/4c/5c
current mode pwm controller ap384xc data sheet 2 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited figure 2. pin configuration of ap3842c/3c/4c/5c (top view) pin configuration pin description pin number pin name function 1 comp this pin is the error amplifier output and is made available for loop compensation. 2v fb the inverting input of the error amplifier. it is normally connected to the switching power supply output through a resistor divider. 3i sense a voltage proportional to indu ctor current is connected to this input. the pwm uses this information to terminat e the output switch conduction. 4r t /c t the oscillator frequency and maximu m output duty cycle are programmed by con- necting resistor r t to v ref and capacitor c t to ground. operation to 500 khz is possi- ble. 5 gnd the combined control circuitry and power ground. 6 output this output directly driv es the gate of a power mosfet. peak currents up to 1.0 a are sourced and sunk by this pin. 7v cc the positive supply of the control ic. 8v ref this is the reference ou tput. it provides charging current for capacitor c t through resistor r t . p/m package (dip-8/soic-8) comp i sense v fb r t /c t 8 v ref 7 v cc 6 output 5 gnd 1 2 3 4
current mode pwm controller ap384xc data sheet 3 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited functional block diagram figure 3. functional block diagram of ap3842c/3c/4c/5c v cc gnd r t /c t v fb i sense comp v ref output osc vref good logic over temp protect t internal bias 2r r s/r 5v ref uvlo 2.50v pwn latch current sense comparator error amp 34v 1v 7 5 4 2 1 3 8 6 s r note: toggle flip-flop used for 3844c/45c only (note)
current mode pwm controller ap384xc data sheet 4 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited package tempe ra- ture range part number marking id packing type tin lead lead free tin lead lead free soic-8 -40 to 85 o c ap3842/3/4/5cm ap3842/3/4/5cm-e1 3842/3/4/5cm 3842/3/4/5cm-e1 tube ap3842/3/4/5cmtr ap3842/3/4/5cmtr-e1 384 2/3/4/5cm 3842/3/4/5cm-e1 tape & reel dip-8 -40 to 85 o c ap3842/3/4/5cp ap3842/3/4/5cp-e1 ap3842/3/4/5cp ap3842/3/4/5cp-e1 tube bcd semiconductor's pb-free products, as designated with "e1" suffix in th e part number, are rohs compliant. circuit type package p: dip-8 m: soic-8 e1: lead free blank: tin lead ap384xc - tr: tape and reel blank: tube ordering information
current mode pwm controller ap384xc data sheet 5 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited parameter symbol value unit supply voltage v cc 30 v output current i o 1 a analog inputs v(ana) -0.3 to 6.3 v error amp output sink current i sink (e.a) 10 ma power dissipation at t a < 25 o c (dip-8) p d (note 3) 1000 mw power dissipation at t a <25 o c (soic-8) p d (note 3) 460 mw junction operating temperature t j -40 to 150 o c thermal resistance (junction to ambient) dip-8 r ja 140 o c/w soic-8 160 o c/w storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10sec) t lead +300 o c esd (machine mode) 250 v note 1: stresses greater than those listed under "absolut e maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those ind i- cated under "recommended operat ing conditions" is not implied. exposure to "absolute maximum ratings" for extended periods may affect device reliability. note 2: all voltages are with respect to pin 5 and all currents are positive into specified terminal. note 3: board thickness 1.6mm, board dimension 90mm x 90mm. parameter symbol min max unit oscillation frequency f 500 khz ambient temperature t a -40 85 o c recommended operating conditions absolute maximum ratings (note 1, 2)
current mode pwm controller ap384xc data sheet 6 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit reference section reference output voltage v ref t j =25 o c, i ref =1ma 4.90 5.00 5.10 v total output variation line, load, temp. 4.82 5.18 v line regulation ? v ref 12v v cc 25v 4 15 mv load regulation ? v ref 1ma i ref 20ma 4 15 mv short circuit output current i sc t a =25 o c -100 -180 ma temperature stability 0.2 0.4 mv/ o c oscillator section oscillation frequency f t j =25 o c 47 52 57 khz oscillator amplitude v osc pin 4, peak to peak (note 6) 1.7 v temperature stability (note 6) 2.5 % voltage stability 12v v cc 25v 0.2 1 % discharge current vpin 4 =2v(note 7) 8.5 9.5 10.5 ma error amplifier section input voltage v i vpin 1=2.5v 2.45 2.50 2.55 v output sink current i sink vpin1=1.1v 5 8 ma output source current i source vpin1=5v -0.5 -0.8 ma high output voltage v oh rl=15k ? to gnd 5 7 v low output voltage v ol rl=15k ? to pin 8 0.7 1.1 v voltage gain 2v v o 4v 65 90 db power supply reject ion ratio psrr 12v v cc 25v 60 70 db current sense section maximum input signal v i (max) vpin1=5v(note 4) 0.9 1 1.1 v gain gv (note 4, 5) 2.85 3 3.15 v/v power supply rejection ratio psrr 12v v cc 25v (note 4, 6) 70 db delay to output vpin3 = 0 to 2v (note 6) 150 300 ns input bias current i bias -3 -10 a output section low output voltage v ol i sink = 20ma 0.1 0.4 v i sink = 200ma 1.4 2.2 v high output voltage v oh i source = 20ma 13 14 v i source = 200ma 12 13 v rise time t r t j =25 o c, c l =1nf (note 6) 50 150 ns fall time t f t j =25 o c, c l =1nf (note 6) 50 150 ns (v cc =15v, r t =10k ? c t =3.3nf, t a = -40 to 85 o c, unless otherwise specified.) electrical characteristics
current mode pwm controller ap384xc data sheet 7 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited electrical character istics (continued) parameter symbol conditions min typ max unit under -voltage lockout section start threshold v th (st) ap3842c/ap3844c 15 16 17 v ap3843c/ap3845c 7.8 8.4 9.0 v min. operation voltage (after turn on) v opr (min.) ap3842c/ap3844c 8.5 10.0 11.5 v ap3843c/ap3845c 7.0 7.6 8.2 v pwm section max. duty cycle d(max.) ap3842c/ap3843c 95 97 100 % d(max.) ap3844c/ap3845c 46 48 50 % min. duty cycle d(min.) 0 % total standby current section start-up current i st 50 80 a operating supply current i cc (opr) vpin3=vpin2=0v 8 12 ma zener voltage v z i cc =25ma 30 34 v over-temperature protect section shutdown temperature t shut (note 6) 155 o c temperature hysteresis t hys (note 6) 25 o c figure 4. basic test circuit a= , 0 vpin3 0.8v ? vpin 3 note 5: here gain is defined as: ? vpin 1 note 6: these parameters, although guaranteed, are not 100% tested in production. note 7: this parameter is measured with rt=10k ? to v ref, it contributes 0.3ma of current to the measured value. so the total current flowing into the ct pin will be 0.3ma higher than the measured value approximately. note 4: parameters are tested at trip point of latch with vpin2 = 0. 1 2 8 7 ap384xc 3 45 6 v ref v cc output gnd r t /c t i sense v fb comp v ref v cc output gnd 1k 1w c t 5k i sense adjust 1k error amp adjust 4.7k 100k 2n2222 4.7k r t 0.1 f 0.1 f a
current mode pwm controller ap384xc data sheet 8 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited figure 4 is the basic test circuit for ap384xc. in testing, the high peak currents associated with capacitive loads necessitate careful grounding techniques. timing and bypass capacitors s hould be connected close to pin 5 in a single point ground. the transistor and 5k potentiometer are used to sample the oscillator waveform and apply an adjustable ramp to pin 3. figure 7. reference voltage vs. ambient temperature typical performance characteristics figure 5. oscillator dead time vs. timing capacitor figure 6. timing resistor vs. frequency electrical character istics (continued) figure 8. output saturation characteristics -40 -20 0 20 40 60 80 100 120 4.980 4.985 4.990 4.995 5.000 5.005 5.010 5.015 v cc =15v, i o =1ma reference voltage (v) ambient temperature ( o c) 0 50 100 150 200 250 300 350 400 450 500 550 600 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v cc =15v, t a =25 o c saturation voltage (v) output sink current (ma)
current mode pwm controller ap384xc data sheet 9 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 9. error amplifier open-loop frequency response figure 10. start-up current vs. ambient temperature 10 100 1k 10k 100k 1m 0 10 20 30 40 50 60 70 80 90 voltage gain (db) frequency (hz) v cc =15v, t a =25 o c -40-20 0 20406080100120 20 30 40 50 60 start-up current ( a) ambient temperature ( o c)
current mode pwm controller ap384xc data sheet 10 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited figure 11. typical application of ap3842c/3c/4c/5c typical application + 8 4 6 3 + + j1 ac 90 to 265v bridge diode 1n4007*4 r2 1m/ 0.25w c14 100 /400v c2 0.01 600v r3 39k 2w d1 byv26e t d3 8tq100 l3 10 c9 2200 c10 1000 c11 1 r20 2k z2 sa12a j2 12v/5a c1 47 r4 10 d2 1n4001 u1 ap3842c/3c/4c/5c v cc 7 2 1 5 v cc v ref v fb r t /c t comp output gnd i sense u2 pc817 c5 220p r14 130k r13 15k r12 100 z1 1n5819 r7 1k r6 20 q1 irf830 r9 7.5k r10 0.51/1w c6 2200p/600v r5 10k c8 0.22 r15 100 r16 8.2k w1 1k r18 3.9k r17 2k u3 az431 ntc c3 0.1 c4 3.3n + r11 820 c7 680p c15 100p r19 10 c15 2.2n
current mode pwm controller ap384xc data sheet 11 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited mechanical dimensions unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 4.800(0.189) 5.000(0.197) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 soic-8
current mode pwm controller ap384xc data sheet 12 sep. 2006 rev. 1. 1 bcd semiconductor manufacturing limited mechanical dimens ions (continued) dip-8 unit: mm(inch) 4 6 r0.750(0.030) 0.254(0.010)typ 0.130(0.005)min 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)typ 4 6 5 0.700(0.028) 9.000(0.354) 9.400(0.370) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 2.540(0.100) typ 6.200(0.244) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)min 3.000(0.118) depth 0.100(0.004) 0.200(0.008) 1.524(0.060) typ
important notice bcd semiconductor manufacturing limite d reserves the right to make changes without further notice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951, fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808, fax: +886-2-2656 2806 usa office bcd semiconductor corporation 3170 de la cruz blvd., suite 105, santa clara, ca 95054-2411, u.s.a - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com

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